A comparative study of (ZnO, In2O3: SnO2, SnO2)/CdS/CdTe/(Cu/)Ni heterojunctions
Identifieur interne : 001220 ( Main/Repository ); précédent : 001219; suivant : 001221A comparative study of (ZnO, In2O3: SnO2, SnO2)/CdS/CdTe/(Cu/)Ni heterojunctions
Auteurs : RBID : Pascal:13-0229226Descripteurs français
- Pascal (Inist)
- Etude comparative, Semiconducteur II-VI, Cuivre, Nickel, Hétérojonction, Cellule solaire, Méthode étude, Diffraction RX, Incidence rasante, Recuit, Chlorure de cadmium, Spectre réflexion, Spectrométrie transformée Fourier, Couche mince, Oxyde de zinc, Oxyde d'indium, Oxyde d'étain, Sulfure de cadmium, Tellurure de cadmium, Prétraitement, Plan expérience, Dépôt phase vapeur, ZnO, In2O3, SnO2, CdS, CdTe, 8105D, 8460J, 8115K, 8105H.
- Wicri :
English descriptors
- KwdEn :
- Annealing, Cadmium chloride, Cadmium sulfide, Cadmium tellurides, Comparative study, Copper, Experimental design, Fourier transform spectroscopy, Grazing incidence, Heterojunctions, II-VI semiconductors, Indium oxide, Investigation method, Nickel, Pretreatment, Reflection spectrum, Solar cells, Thin films, Tin oxide, Vapor deposition, XRD, Zinc oxide.
Abstract
The influence of the manufacturing technology on the structural properties of CdTe and CdS layers, components of the CdS/CdTe solar cells, has been investigated. CdTe based solar cells have been prepared using glass substrates coated with different transparent conductive oxides (TCOs: SnO2, In2O3: SnO2 (ITO), ZnO:Al, ZnO:Al/i-ZnO). The analysis of the technology combined with various investigation methods allowed to determine optimum deposition parameters for CdS and CdTe for each type of TCO used. X-ray diffraction (XRD) and grazing incidence XRD analysis have been carried out for TCO, CdS, and CdTe layers at different deposition stages before and after annealing in the presence of CdCl2 in air. The reflection spectra in the 100-600 cm-1 spectral region have been thoroughly studied by using Fourier transform infrared spectroscopy. It was found that (i) the best quality possess CdS and CdTe thin films sequentially deposited on ZnO:Al substrates and that (ii) the pre-treatment defects can be effectively cured and most of the secondary phases can be removed by annealing, while the basic structure of the investigated thin films does not essentially change.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A comparative study of (ZnO, In<sub>2</sub>O<sub>3</sub>: SnO<sub>2</sub>, SnO<sub>2</sub>)/CdS/CdTe/(Cu/)Ni heterojunctions</title><author><name sortKey="Vatavu, Sergiu" uniqKey="Vatavu S">Sergiu Vatavu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str.</s1><s2>2009 Chisinau</s2><s3>MDA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>2009 Chisinau</wicri:noRegion></affiliation></author><author><name sortKey="Rotaru, Corneliu" uniqKey="Rotaru C">Corneliu Rotaru</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str.</s1><s2>2009 Chisinau</s2><s3>MDA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>2009 Chisinau</wicri:noRegion></affiliation></author><author><name sortKey="Fedorov, Vladimir" uniqKey="Fedorov V">Vladimir Fedorov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str.</s1><s2>2009 Chisinau</s2><s3>MDA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>2009 Chisinau</wicri:noRegion></affiliation></author><author><name sortKey="Stein, Timo A" uniqKey="Stein T">Timo A. Stein</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Caraman, Mihail" uniqKey="Caraman M">Mihail Caraman</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str.</s1><s2>2009 Chisinau</s2><s3>MDA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>2009 Chisinau</wicri:noRegion></affiliation></author><author><name sortKey="Evtodiev, Igor" uniqKey="Evtodiev I">Igor Evtodiev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str.</s1><s2>2009 Chisinau</s2><s3>MDA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>2009 Chisinau</wicri:noRegion></affiliation></author><author><name sortKey="Kelch, Carola" uniqKey="Kelch C">Carola Kelch</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Kirsch, Michael" uniqKey="Kirsch M">Michael Kirsch</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Chetrus, Petru" uniqKey="Chetrus P">Petru Chetrus</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str.</s1><s2>2009 Chisinau</s2><s3>MDA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>2009 Chisinau</wicri:noRegion></affiliation></author><author><name sortKey="Gasin, Petru" uniqKey="Gasin P">Petru Gasin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str.</s1><s2>2009 Chisinau</s2><s3>MDA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>2009 Chisinau</wicri:noRegion></affiliation></author><author><name sortKey="Lux Steiner, Martha Ch" uniqKey="Lux Steiner M">Martha Ch. Lux-Steiner</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Rusu, Marin" uniqKey="Rusu M">Marin Rusu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str.</s1><s2>2009 Chisinau</s2><s3>MDA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>2009 Chisinau</wicri:noRegion></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0229226</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0229226 INIST</idno><idno type="RBID">Pascal:13-0229226</idno><idno type="wicri:Area/Main/Corpus">000B09</idno><idno type="wicri:Area/Main/Repository">001220</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Cadmium chloride</term><term>Cadmium sulfide</term><term>Cadmium tellurides</term><term>Comparative study</term><term>Copper</term><term>Experimental design</term><term>Fourier transform spectroscopy</term><term>Grazing incidence</term><term>Heterojunctions</term><term>II-VI semiconductors</term><term>Indium oxide</term><term>Investigation method</term><term>Nickel</term><term>Pretreatment</term><term>Reflection spectrum</term><term>Solar cells</term><term>Thin films</term><term>Tin oxide</term><term>Vapor deposition</term><term>XRD</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude comparative</term><term>Semiconducteur II-VI</term><term>Cuivre</term><term>Nickel</term><term>Hétérojonction</term><term>Cellule solaire</term><term>Méthode étude</term><term>Diffraction RX</term><term>Incidence rasante</term><term>Recuit</term><term>Chlorure de cadmium</term><term>Spectre réflexion</term><term>Spectrométrie transformée Fourier</term><term>Couche mince</term><term>Oxyde de zinc</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Sulfure de cadmium</term><term>Tellurure de cadmium</term><term>Prétraitement</term><term>Plan expérience</term><term>Dépôt phase vapeur</term><term>ZnO</term><term>In2O3</term><term>SnO2</term><term>CdS</term><term>CdTe</term><term>8105D</term><term>8460J</term><term>8115K</term><term>8105H</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term><term>Nickel</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The influence of the manufacturing technology on the structural properties of CdTe and CdS layers, components of the CdS/CdTe solar cells, has been investigated. CdTe based solar cells have been prepared using glass substrates coated with different transparent conductive oxides (TCOs: SnO<sub>2</sub>, In<sub>2</sub>O<sub>3</sub>: SnO<sub>2</sub> (ITO), ZnO:Al, ZnO:Al/i-ZnO). The analysis of the technology combined with various investigation methods allowed to determine optimum deposition parameters for CdS and CdTe for each type of TCO used. X-ray diffraction (XRD) and grazing incidence XRD analysis have been carried out for TCO, CdS, and CdTe layers at different deposition stages before and after annealing in the presence of CdCl<sub>2</sub> in air. The reflection spectra in the 100-600 cm<sup>-1</sup> spectral region have been thoroughly studied by using Fourier transform infrared spectroscopy. It was found that (i) the best quality possess CdS and CdTe thin films sequentially deposited on ZnO:Al substrates and that (ii) the pre-treatment defects can be effectively cured and most of the secondary phases can be removed by annealing, while the basic structure of the investigated thin films does not essentially change.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>535</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>A comparative study of (ZnO, In<sub>2</sub>O<sub>3</sub>: SnO<sub>2</sub>, SnO<sub>2</sub>)/CdS/CdTe/(Cu/)Ni heterojunctions</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>E-MRS 2012 Symposium B</s1></fA09><fA11 i1="01" i2="1"><s1>VATAVU (Sergiu)</s1></fA11><fA11 i1="02" i2="1"><s1>ROTARU (Corneliu)</s1></fA11><fA11 i1="03" i2="1"><s1>FEDOROV (Vladimir)</s1></fA11><fA11 i1="04" i2="1"><s1>STEIN (Timo A.)</s1></fA11><fA11 i1="05" i2="1"><s1>CARAMAN (Mihail)</s1></fA11><fA11 i1="06" i2="1"><s1>EVTODIEV (Igor)</s1></fA11><fA11 i1="07" i2="1"><s1>KELCH (Carola)</s1></fA11><fA11 i1="08" i2="1"><s1>KIRSCH (Michael)</s1></fA11><fA11 i1="09" i2="1"><s1>CHETRUS (Petru)</s1></fA11><fA11 i1="10" i2="1"><s1>GASIN (Petru)</s1></fA11><fA11 i1="11" i2="1"><s1>LUX-STEINER (Martha Ch.)</s1></fA11><fA11 i1="12" i2="1"><s1>RUSU (Marin)</s1></fA11><fA12 i1="01" i2="1"><s1>EDOFF (Marika)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>ROMEO (Alessandro)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SCHEER (Roland)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>SHAFARMAN (William)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>KATAGIRI (Hirono)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Faculty of Physics and Engineering, Moldova State University, 60 A. Mateevici str.</s1><s2>2009 Chisinau</s2><s3>MDA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>12 aut.</sZ></fA14><fA14 i1="02"><s1>Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Lise-Meitner-Campus, Hahn-Meitner-Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>244-248</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000504170550530</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>16 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0229226</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The influence of the manufacturing technology on the structural properties of CdTe and CdS layers, components of the CdS/CdTe solar cells, has been investigated. CdTe based solar cells have been prepared using glass substrates coated with different transparent conductive oxides (TCOs: SnO<sub>2</sub>, In<sub>2</sub>O<sub>3</sub>: SnO<sub>2</sub> (ITO), ZnO:Al, ZnO:Al/i-ZnO). The analysis of the technology combined with various investigation methods allowed to determine optimum deposition parameters for CdS and CdTe for each type of TCO used. X-ray diffraction (XRD) and grazing incidence XRD analysis have been carried out for TCO, CdS, and CdTe layers at different deposition stages before and after annealing in the presence of CdCl<sub>2</sub> in air. The reflection spectra in the 100-600 cm<sup>-1</sup> spectral region have been thoroughly studied by using Fourier transform infrared spectroscopy. It was found that (i) the best quality possess CdS and CdTe thin films sequentially deposited on ZnO:Al substrates and that (ii) the pre-treatment defects can be effectively cured and most of the secondary phases can be removed by annealing, while the basic structure of the investigated thin films does not essentially change.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="04" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Etude comparative</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Comparative study</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Estudio comparativo</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>II-VI semiconductors</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Nickel</s0><s2>NC</s2><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Nickel</s0><s2>NC</s2><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Hétérojonction</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Heterojunctions</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Solar cells</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Méthode étude</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Investigation method</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Método estudio</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>XRD</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Incidence rasante</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Grazing incidence</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Incidencia rasante</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Recuit</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Annealing</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Chlorure de cadmium</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Cadmium chloride</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Cadmio cloruro</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Spectre réflexion</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Reflection spectrum</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Espectro reflexión</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Spectrométrie transformée Fourier</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Fourier transform spectroscopy</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Couche mince</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Thin films</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium oxide</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio óxido</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Oxyde d'étain</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Tin oxide</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Estaño óxido</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Sulfure de cadmium</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Cadmium sulfide</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Cadmio sulfuro</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Tellurure de cadmium</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Cadmium tellurides</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Prétraitement</s0><s5>29</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Pretreatment</s0><s5>29</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Pretratamiento</s0><s5>29</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Plan expérience</s0><s5>30</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Experimental design</s0><s5>30</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Dépôt phase vapeur</s0><s5>31</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Vapor deposition</s0><s5>31</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>In2O3</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>SnO2</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>CdS</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>CdTe</s0><s4>INC</s4><s5>50</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>8105D</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>8115K</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>8105H</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>210</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting 2012. Symposium B "Thin Film Chalcogenide Photovoltaic Materials"</s1><s3>Strasbourg FRA</s3><s4>2012-05-14</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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|texte= A comparative study of (ZnO, In2O3: SnO2, SnO2)/CdS/CdTe/(Cu/)Ni heterojunctions
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